Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US6803260B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.