Method of manufacturing a device with epitaxial base
US6803298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Jun 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage electrical device (20), having a substrate layer (22), base layer (24) and top layer (26), provides high voltage properties in excess of 1000V. Slicing a wafer (28) from an ingot (30) created in by monocrystalline growth forms the substrate layer (22), and this high quality crystal is used as the high resistivity layer in the device (20). The base layer (24) is a highly doped, low resistivity, epitaxial layer deposited on the lower surface (32) of the substrate layer (22) at a fast rate greater than approximately 2 microns/minute. The top layer (26) is a diffusion layer diffused into an upper surface (34) of the substrate layer (22). To control stress in the wafer (28), the epitaxial base is doped with germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.