Method of manufacturing a semiconductor device having a ground plane
US6803300B2 · kind B2 · utility
8Cited by
20References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes at least first and second lower layer wirings provided on a surface of an insulator on a semiconductor substrate, a first interlayer film provided on the insulator to cover surfaces of the first and second lower layer wirings, first and second connection wirings which are provided on the first interlayer film and include first and second films contacting the first and second lower layer wirings respectively, and a plate electrode which is continuously provided on the second connection wiring and includes at least the first film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.