Semiconductor device and method of manufacturing the same
US6803622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor device includes a semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a first gate electrode formed on the first insulating film; a second insulating film having a three-layered structure made by sequentially depositing a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer on the first gate electrode; a second gate electrode formed on the second insulating film; a first plane including the side surface of the first gate electrode or the side surface of the second gate electrode; and a second plane including the side surface of the second kind of insulating layer, wherein distance between said first plane and said second plane does not exceed 5 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.