Dual band power amplifier with improved isolation
US6803817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2003 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Feb 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/111
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention is a dual band power amplifier with a small footprint having excellent band-to-band isolation. An improved second and fourth harmonic trap at the output of the low band power amplifier comprises a first capacitance shunted to ground placed in series with an inductance, the inductance preferably in the form of a transmission line of predetermined length, and a second capacitance coupled between an intermediate point of the transmission line inductance and ground. Band-to-band isolation can be additively increased by further forming a ground loop between the outputs of the two power amplifiers. The ground loop further isolates the high band amplifier from the low band amplifier by causing the magnetic fields generated around the output wire bonds of the low band power amplifier to set up circulating currents primarily in the ground loop, rather than coupling into the output wire bonds of the high band power amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.