Data storage medium having layers acting as transistor
US6804137B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Jun 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A re-recordable data storage medium of one embodiment includes a substrate layer, a phase-changeable layer, and an intermediate layer. The substrate layer has a semiconductor type selected from p-type and n-type. The phase-changeable layer has a first phase corresponding to a first storable logical value, and a second phase corresponding to a second storable logical value. The phase-changeable layer has a semiconductor type identical to that of the substrate layer. The intermediate layer is between the phase-changeable layer and the substrate layer, and has a semiconductor type opposite to that of the phase-changeable and substrate layer. The substrate, phase-changeable, and intermediate layers act as a transistor under selective illumination of the phase-changeable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.