Monolithic expanded beam mode electroabsorption modulator
US6804421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A monolithic single pass expanded beam mode active optical device includes: a substrate; a waveguide layer coupled to the top surface of the substrate; a semiconductor layer coupled to the waveguide layer; first and second electrodes for receiving an electric signal coupled to the substrate and the semiconductor layer, respectively. The waveguide layer includes a plurality of sublayers, forming a quantum well structure, which is responsive to the electric signal. The waveguide layer has three sections, two expansion/contraction sections and an active section, which extends between and adjacent to the two expansion/contraction sections. The thickness of at least one of the plurality of sublayers varies within the expansion/contraction portions of the quantum well structure. Possible interactions of the active region with the light include: absorption in the case of an electro-absorptive modulator and optical gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.