Healing of micro-cracks in an on-chip dielectric
US6806168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment there is provided a method comprising performing a singulation operation on a wafer; and treating the wafer to at least reduce a propagation of micro-cracks formed in the wafer during the singulation. In another embodiment there is provided a semi-conductor die comprising a substrate having a central first portion, and a peripheral second portion around the central first portion; an integrated circuit formed on the central first portion; and a guard ring disposed between the first and second portions of the substrate to prevent a propagation of micro-cracks formed in the second portion into the first portion, the micro-cracks having been formed during a singulation operation to separate the semiconductor die from a wafer, wherein the second portion includes micro-cracks filled with a crack-healing material to arrest propagation of the micro-cracks beyond the ring and into the central first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.