Manufacturing method of semiconductor IC device
US6806195B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 5, 1998 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Feb 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a manufacturing method of the semiconductor IC device having fine-structure connecting holes or trenches with high dimensional precision. There is the following step of the operation: a hook-shaped hard mask made of polysilicon film 18 and polysilicon film 20a is formed on the surface of silica film 17 for forming connecting holes 21 accommodating plugs that perform an electrical connection with the lower portion of the lower electrode of the capacitor in the COB-type memory cells, with the hook-shaped hard mask being used as an etching mask in selective etching so as to form connecting holes 21 on silica film 17 and silica film 15 below it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.