Method of removing silicon oxide from a surface of a substrate
US6806202B2 · kind B2 · utility
0Cited by
72References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.