Tantalum oxide film, use thereof, process for forming the same and composition
US6806210B2 · kind B2 · utility
3Cited by
1References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02345
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.