Switching device of an X-ray sensor and method for manufacturing the same
US6806472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2001 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A structure which prevents the distortion of the TFT characteristics caused by an electric charge formed on the surface of a protecting layer which exists on the TFT and a method for manufacturing the TFT. A switching device of an X-ray sensor comprises a TFT provided on a transparent substrate, a first protecting insulation layer which covers the TFT, storage capacity electrodes connected to a ground wire on the first protecting insulation layer, a second protecting insulation layer which covers the storage capacity electrode formed on the first protecting insulation layer, and a pixel electrode connected to one terminal of the TFT on the second protecting insulation layer, at least one portion of the storage capacity electrodes shielding the TFT region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.