Semiconductor light emitting device and method for producing the same
US6806507B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2001 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1−s−t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.