Heterojunction bipolar transistor having wide bandgap material in collector
US6806513B2 · kind B2 · utility
11Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Oct 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.