Electronic device having a filled dielectric medium
US6806542B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jun 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid state electronic device consists of a bottom electrode (10) and a top electrode (20) with a dielectric layer (30) sandwiched in between. In one example, the dielectric layer is aluminum oxide. Microscopic voids or pinholes (40) in the aluminum oxide layer are filled with an electrically nonconductive material (50) to prevent current leakage between the two electrodes, and the addition of the electrically nonconductive material increases the performance of the device. The electrically nonconductive material can be p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.