Semiconductor device and method of manufacturing the same
US6807082B2 · kind B2 · utility
20Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A stacked FeRAM uses a structure where the bit line is formed above the ferroelectric capacitor. The word line is formed so that it moves away from the opposing other word line in areas near the contact plug with the relevant contact plug in between, and moves toward the other word line in areas not near the contact plug, and the contact hole is formed so that it is displaced alternately with respect to the longitudinal centerline of the relevant plate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.