Semiconductor laser
US6807212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises:a semiconductor bottom guide layer (11) having the following two adjacent bottom parts:an undoped first bottom part (11a) adjacent the central region, andan n-type doped second bottom part (11b) adjacent the bottom cladding layer,a semiconductor top guide layer (12) having the following two adjacent top parts:an undoped first top part (12a) adjacent the central region, anda p-type doped second top part (12b) adjacent the top cladding layer.The first bottom and top parts form a non-doped region (ND) more than 0.5 &mgr;m thick, and the refractive index difference (&Dgr;nopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.