Growth of ZnO film using single source CVD

US6808743B2 · kind B2 · utility

Assignee

• Unisearch Limited · AU

Inventors

• Antonella Petrella · Sydney, AU
• Robert Norman Lamb · Parramatta, AU
• Nicholas Kenneth Roberts · Sydney, AU

Key dates

• Filing date: Apr 9, 2003
• Grant date: Oct 26, 2004
• Expiry date: Apr 9, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/407
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn4O(O2CNRARB)6, where RA and RB are any combination of akyl or perfluoroalkyl groups, and decomposing at least some of the vapour at the surface of the substrate such that the film of zinc oxide forms. An advantage of using this precursor material is that, unlike in the prior art, no deliberate introduction of water vapour to improve christallographic orientation is required. Higher purities in oxide films are produced.