Process for fabricating a microelectromechanical structure
US6808952B1 · kind B1 · utility
23Cited by
6References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0167
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process is disclosed for forming a microelectromechanical (MEM) structure on a substrate having from 5 to 6 or more layers of deposited and patterned polysilicon. The process is based on determining a radius of curvature of the substrate which is bowed due to accumulated stress in the layers of polysilicon and a sacrificial material used to buildup the MEM structure, and then providing one or more stress-compensation layers on a backside of the substrate to flatten the substrate and allow further processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.