Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
US6809041B2 · kind B2 · utility
11Cited by
9References
41Claims
0Family size
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Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jan 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hybrid organic/inorganic organosilicon networked polymer material having a compositional formula [Si(O)CH2]n and a dielectric constant of less than 2.4 is provided. The material may be used as an interlayer dielectric film in a semiconductor device. The film is preferably fabricated by a sol-gel process using an alkoxy substituted hyperbranched polycarbosilane precursor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.