Microwave bonding of thin film metal coated substrates
US6809305B2 · kind B2 · utility
1Cited by
9References
35Claims
0Family size
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Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Bonding of materials such as MEMS materials is carried out using microwaves. High microwave absorbing films are placed within a microwave cavity containing other less microwave absorbing materials, and excited to cause selective heating in the skin depth of the films. This causes heating in one place more than another. This thereby minimizes unwanted heating effects during the microwave bonding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.