Light-emitting diode with enhanced brightness and method for fabricating the same
US6809341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Mar 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.