Patent · US Expired

Metal-to-metal antifuse structure and fabrication method

US6809398B2 · kind B2 · utility

1Cited by
13References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 14, 2000
Grant dateOct 26, 2004
Priority date—
Expiry dateDec 14, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/957
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A metal-to-metal antifuse according to the present invention is compatible with a Cu dual damascene process and is formed over a lower Cu metal layer planarized with the top surface of a lower insulating layer. A lower barrier layer is disposed over the lower Cu metal layer. An antifuse material layer is disposed over the lower barrier layer. An upper barrier layer is disposed over the antifuse material layer. An upper insulating layer is disposed over the upper barrier layer. An upper Cu metal layer is planarized with the top surface of the upper insulating layer and extends therethrough to make electrical contact with the upper barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.