Characterization of induced shift on an overlay target using post-etch artifact wafers
US6809420B1 · kind B1 · utility
9Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to an overlay that allows for the characterization of wafer-induced shift without the added risk of low wafer yield. The present invention also relates to a method of quanitifying both wafer-induced shift and tool-induced shift in the field of photolithgraphy. By chararacterizing wafer-induced shift in an artifact wafer, tool-induced shift may be determined by use of the characterized wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.