Method for crystallizing amorphous film and method for fabricating LCD by using the same
US6812072B2 · kind B2 · utility
3Cited by
3References
47Claims
0Family size
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Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for crystallizing an amorphous film for enhancing a crystallinity and minimizing an amount of remaining metal in a polycrystalline silicon thin film, and a method for fabricating a liquid crystal display device (LCD) by using the same. The method for crystallizing an amorphous film including forming an amorphous film on a substrate; forming a thin first metal layer; forming a second metal layer on the amorphous film at predetermined parts; and heat treating the amorphous film, for crystallizing the amorphous film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.