Method for manufacturing non-volatile memory device
US6812097B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Feb 10, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A method is provided for manufacturing a MONOS type non-volatile memory device. The method comprises the following steps: a step of pattering a stopper layer and a first conductive layer; a step of forming an ONO film composed of a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer above a semiconductor substrate and on both sides of the first conductive layer; a step of forming a second conductive layer above the ONO film 220; a step of anisotropically etching the second conductive layer, and then isotropically etching the same, thereby forming control gates in the form of sidewalls through the ONO films on both side surfaces of the first conductive layer; and a step of patterning the first conductive layer to form a word gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.