Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory
US6812510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×1018 cm−3 or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×1018 cm−3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.