Semiconductor device and method for manufacturing the same
US6812573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2001 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.