System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device
US6812729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.