Long wavelength VCSEL with tunnel junction, and implant
US6813293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.