Luminescence stabilization of anodically oxidized porous silicon layers
US6814849B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Dec 10, 2001 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jun 16, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.