Method for annealing an electrodeposition structure
US6814915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Sep 11, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D1/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for annealing a structure formed by electrodeposition including providing the electrodeposition structure, the electrodeposition structure including an eletroformed mold, the electroformed mold having a nominal thickness between and including 0.5 mm to 8.0 mm and having a melting temperature; heating the electrodeposition structure to a temperature between ambient temperature and the melting temperature of the electrodeposition structure; isostatically pressurizing the electrodeposition structure to a pressure above ambient pressure; cooling the electrodeposition structure to ambient temperature; and depressurizing the electrodeposition structure to ambient pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.