Passivation of porous semiconductors
US6815162B2 · kind B2 · utility
6Cited by
0References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2001 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Sep 8, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/823
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.