Method for manufacturing infrared detector using diffusion of hydrogen plasma
US6815250B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jan 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2212
Abstract
A method for manufacturing an infrared detector forms a p-n junction by forming a low concentration p type HgCdTe layer, forming a diffusion preventing layer for exposing some upper part of the low concentration p type HgCdTe layer, and by forming a low concentration n type HgCdTe layer by diffusing hydrogen ions and atoms to the low concentration p type HgCdTe layer using hydrogen plasma. The hydrogen ions or atoms are diffused on some of the low concentration p type HgCdTe layer to be a predetermined depth using the hydrogen plasma to form the low concentration n type HgCdTe layer in order to prevent an interface of the p-n junction from damaging, and thereby leakage current can be prevented, fabrication cost is not increased and yield is increased due to simple processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.