Method for forming a thin film using an atomic layer deposition (ALD) process
US6815350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Mar 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.