Electron beam lithography method for plating sub-100 nm trenches
US6815358B2 · kind B2 · utility
1Cited by
13References
16Claims
0Family size
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Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Nov 29, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/1871
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A lithography method for plating sub-100 nm narrow trenches, including providing a thin undercoat dissolution layer intermediate a seed layer and a resist layer, wherein the undercoat dissolution layer is relatively completely cleared off the seed layer by the developer solution such that the sides of the narrow trench will be generally vertical, particularly at the base of the narrow trench, thus facilitating plating the narrow trench with a high magnetic moment material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.