Nitride-based semiconductor light-emitting device
US6815730B2 · kind B2 · utility
24Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Jan 28, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jan 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor light-emitting device includes a GaN-based substrate and a semiconductor stacked-layer structure including a plurality of nitride-based semiconductor layers grown on the GaN-based substrate by vapor deposition. The GaN-based substrate has an interface region contacting the semiconductor stacked-layer structure and the interface region contains oxygen atoms of concentration n in the range of 2×1016≦n≦1022 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.