Semiconductor memory element, semiconductor device and control method thereof
US6815763B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor flash memory required to have high reliability, injection and extraction of electrons must be performed through an oxide film obtained by directly oxidizing a silicon substrate. Accordingly, the voltage to be used is a large voltage ranging from positive to negative one. In contrast, by storing charges in a plurality of dispersed regions, high reliability is achieved. Based on the high reliability, transfer of electrons is permitted through not only the oxide film obtained by directly thermally oxidizing a high reliability silicon substrate but also another oxide film deposited by CVD, or the like. In consequence, a device is controlled by electric potentials of the same polarity upon writing of data and upon erasing of data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.