Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
US6815764B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.