Semiconductor optical device and method of manufacturing the same
US6815786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3072
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.