Buried, fully depletable, high fill factor photodiodes
US6815791B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
Abstract
A semiconductor detector of electromagnetic radiation which utilizes a dual-purpose electrode which extends significantly beyond the edge of a photodiode. This configuration reduces the sensitivity of device performance on small misalignments between manufacturing steps while reducing dark currents, kTC noise, and “ghost” images. The collection-mode potential of the dual-purpose electrode can be adjusted to achieve charge confinement and enhanced collection efficiency, reducing or eliminating the need for an additional pinning layer. Finally, the present invention enhances the fill factor of the photodiode by shielding the photon-created charge carriers formed in the substrate from the potential wells of the surrounding circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.