Semiconductor device and method of manufacturing the same
US6815824B2 · kind B2 · utility
5Cited by
8References
1Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 24, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jun 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.