Thin film transistor, liquid crystal display panel, and method of manufacturing thin film transistor
US6816209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention reduces the number of necessary steps in a thin-film-transistor manufacturing process and prevents an abnormal potential from being generated due to a leak current from another data line.More particularly, the present invention is directed to a thin film transistor comprising a gate electrode 30 disposed on a predetermined substrate and formed in a predetermined pattern, a semiconductor layer formed correspondingly to patterning of the gate electrode 30, a pixel electrode 25 interposed by the semiconductor layer, and a signal electrode 26 interposed by the semiconductor layer and disposed at a predetermined interval from the pixel electrode 25, in which the signal electrode 26 is disposed at such a position where the signal electrode prevents crosstalk running from adjacent signal lines 32b and 32c to the pixel electrode 25 via the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.