Surface emitting semiconductor laser
US6816527B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Mar 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser includes a substrate on which a resonator is formed, the resonator including a lower reflection mirror, an active region, and an upper reflection mirror, a metal layer that is provided on the upper reflection mirror and has a first aperture that defines an outgoing region of laser light generated in the active region, and an optical confinement region that is provided between the metal layer and the lower reflection mirror and has a second aperture that defines a light emission region of the laser light. The second aperture has a diameter equal to or greater than 12 &mgr;m, and the first aperture has a diameter that is 1 to 5 &mgr;m smaller than that of the second aperture. The laser light emitted from the emitting region has a multimode including multiple orders selected within a predetermined wavelength range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.