Nonlinear semiconductor light sources
US6816530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Sep 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic apparatus has a laser optical cavity. The laser optical cavity has a multi-layer structure that includes a first active semiconductor multi-layer and a second semiconductor multi-layer. The second semiconductor multi-layer is located laterally adjacent to the first active semiconductor multi-layer. The first active semiconductor multi-layer includes a sequence of quantum well structures that produce light of a lasing frequency in response to being electrically pumped. The second semiconductor multi-layer includes a sequence of quantum well structures and is configured to both absorb light of the lasing frequency and produce one of parametric light and harmonic light in response to absorbing light of the lasing frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.