High-power, kink-free, single mode laser diodes
US6816531B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2000 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Mar 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.