Highly heat-resistant plasma etching electrode and dry etching device including the same
US6818097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Jan 17, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L2666/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching electrode for dry etching devices for production of semiconductor devices. The plasma etching electrode is prevented from contamination with impurities, provides good thermal and electrical conductance and heat resistance at the joint between the electrode plate and pedestal (or supporting ring), and hence improves etching characteristics and silicon wafer yield. The highly heat-resistant plasma etching electrode includes an electrode plate of silicon which is supported by and uniformly joined to a pedestal by an adhesive. The pedestal is made of graphite. The adhesive includes an epoxy resin containing polycarbodiimide resin and carbon powder. A dry etching device including the electrode is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.