Anodizing apparatus
US6818104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.