Non-volatile semiconductor storage device having conductive layer surrounding floating gate
US6818942B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
In a non-volatile semiconductor storage device, a barrier layer is disposed, via an interlayer isolating film, in an area surrounding a floating gate, including an area adjoining a connecting part of the floating gate, without covering the floating gate. The edge of the barrier layer is, in an overhead view relative to the surface of the semiconductor substrate, disposed at a space of 2 &mgr;m apart from the edge of the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.