Temperature sensor

US6819217B2 · kind B2 · utility

Assignee

• Heraeus Sensor Technology GmbH · DE

Inventors

• Karl-Heinz Wienand · Aschaffenburg, DE
• Thomas Loose · Gelnhausen, DE

Key dates

• Filing date: Mar 11, 2003
• Grant date: Nov 16, 2004
• Expiry date: Mar 11, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G01K7/183
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A temperature sensor is provided with a temperature-sensitive element on a surface of a monocrystalline substrate, wherein the temperature-sensitive element is made of a platinum thin-film resistor and is produced as an epitaxial layer. The monocrystalline substrate can be an electrically insulating material, preferably &agr;-Al2O3 or MgO. Alternatively, the substrate may be an electrically conducting material, such as silicon, with an electrically insulating epitaxial layer arranged between the substrate and the platinum thin-film resistor. The platinum thin-film resistor epitaxial layer is preferably deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE).